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| BSV 52 NPN Switching Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren fur die Oberflachenmontage Power dissipation - Verlustleistung 2.9 0.1 1.1 NPN 250 mW SOT-23 (TO-236) 0.01 g 0.4 3 Plastic case Kunststoffgehause 1.3 0.1 Type Code 1 2 2.5 max Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle 1.9 Dimensions / Mae in mm 1=B 2=E 3=C Maximum ratings (TA = 25/C) Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation - Verlustleistung Collector current - Kollektorstrom (dc) Peak Collector current - Kollektor-Spitzenstrom Peak Base current - Basis-Spitzenstrom Junction temp. - Sperrschichttemperatur Storage temperature - Lagerungstemperatur B open E open C open VCE0 VCB0 VEB0 Ptot IC ICM IBM Tj TS Grenzwerte (TA = 25/C) BSV 52 12 V 20 V 5V 250 mW 1) 100 mA 200 mA 100 mA 150/C - 65...+ 150/C Characteristics (Tj = 25/C) Min. Collector-Base cutoff current - Kollektorreststrom IE = 0, VCB = 20 V IE = 0, VCB = 20 V, Tj = 125/C Emitter-Base cutoff current - Emitterreststrom IC = 0, VEB = 4 V IC = 10 mA, IB = 0.3 mA IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA IEB0 1 Kennwerte (Tj = 25/C) Typ. - - - - - - Max. 400 nA 30 :A 100 nA 300 mV 250 mV 400 mV ICB0 ICB0 - - - - - - Collector saturation volt. - Kollektor-Sattigungsspg. ) VCEsat VCEsat VCEsat 1 ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 01.11.2003 18 Switching Transistors Characteristics (Tj = 25/C) Min. Base saturation voltage - Basis-Sattigungsspannung 1) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA VCE = 1 V, IC = 1 mA VCE = 1 V, IC = 10 mA VCE = 1 V, IC = 50 mA Gain-Bandwidth Product - Transitfrequenz VCE = 10 V, IC = 10 mA, f = 100 MHz VCB = 5 V, IE = ie = 0, f = 1 MHz VEB = 1 V, IC = ic = 0, f = 1 MHz Switching times - Schaltzeiten turn-on time delay time rise time turn-off time storage time fall time Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Marking - Stempelung ICon = 10 mA IBon = 3 mA - IBoff = 1.5 mA ton td tr toff ts tf - - - - - - RthA BSV 52 = B2 - - - - - - fT CCB0 CEB0 400 MHz - - 500 MHz - - VBEsat VBEsat hFE hFE hFE 700 mV - 25 40 25 - - - - - BSV 52 Kennwerte (Tj = 25/C) Typ. Max. 850 mV 1.2 V - 120 - - 4 pF 4.5 pF 10 ns 4 ns 6 ns 20 ns 10 ns 10 ns 420 K/W 2) DC current gain - Kollektor-Basis-Stromverhaltnis 1) Collector-Base Capacitance - Kollektor-Basis-Kapazitat Emitter-Base Capacitance - Emitter-Basis-Kapazitat ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 01.11.2003 1 2 19 |
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